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The Inverse-Narrow-Width Effect: Ieee Electron Device Letters, Vol. Edl-I, No. JULY 1986 419 | PDF | Mosfet | Field Effect Transistor
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Electron Device Letters - IEEE Electron Devices Society
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IEEE Electron Device Letters template - For Authors
All-Two-Dimensional-Material Hot Electron Transistor | Nature Portfolio Engineering Community
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IEEE Electron Device Letters template - For Authors
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A Lateral AlGaN/GaN Schottky Barrier Diode with 0.36 V Turn-on Voltage and 10 kV Breakdown Voltage by Using Double Barrier Anode
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High Performance Monolithically Integrated GaN Driving VMOSFET on LED
